Toshiba Semiconductor and Storage TPC8032-H(TE12LQM)

TPC8032-H-TE12LQM- Toshiba Semiconductor and Storage TPC8032-H(TE12LQM)
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
8-SOIC (0.173", 4.40mm Width)
Rds On (Max) @ Id, Vgs:
6.5mOhm @ 7.5A, 10V
title:
TPC8032-H(TE12LQM)
FET Type:
N-Channel
Drain to Source Voltage (Vdss):
30 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
2846 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
33 nC @ 10 V
Supplier Device Package:
8-SOP (5.5x6.0)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
15A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
TPC8032
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPC8032-H(TE12LQM). It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.173", 4.40mm width). It has a maximum Rds On and voltage of 6.5mohm @ 7.5a, 10v. It carries FET type n-channel. The product has a 30 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2846 pf @ 10 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 33 nc @ 10 v. 8-sop (5.5x6.0) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 15a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpc8032, a base product number of the product. The product is designated with the ear99 code number.

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Mosfets Prod Guide(Datasheets)

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