Deliver to
United Kingdom
Due to adverse weather conditions in the UK, some orders might face delayed processing. We apologise for the inconvenience and thank you for your patience.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPC8012-H(TE12L,Q). It has a maximum Rds On and voltage of 400 mohm @ 900ma, 10v. It features n-channel 200v 1.8a (ta) 1w (ta) surface mount 8-sop (5.5x6.0). The product's input capacitance at maximum includes 440pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product π-mosv, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 11nc @ 10v. 8-sop (5.5x6.0) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, digi-reel® is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-soic (0.173", 4.40mm width). The product carries maximum power dissipation 1w (ta). The product has a 200v drain to source voltage. The continuous current drain at 25°C is 1.8a (ta). This product use mosfet (metal oxide) technology. The toshiba semiconductor and storage's product offers user-desired applications.
For more information please check the datasheets.
Basket Total:
£ 0
