Deliver to
United Kingdom
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPC8012-H(TE12L,Q). It has a maximum Rds On and voltage of 400 mohm @ 900ma, 10v. It features n-channel 200v 1.8a (ta) 1w (ta) surface mount 8-sop (5.5x6.0). The product's input capacitance at maximum includes 440pf @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 5v @ 1ma. The product π-mosv, is a highly preferred choice for users. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 11nc @ 10v. 8-sop (5.5x6.0) is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, digi-reel® is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in 8-soic (0.173", 4.40mm width). The product carries maximum power dissipation 1w (ta). The product has a 200v drain to source voltage. The continuous current drain at 25°C is 1.8a (ta). This product use mosfet (metal oxide) technology. The toshiba semiconductor and storage's product offers user-desired applications.
For more information please check the datasheets.
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