Toshiba Semiconductor and Storage TPC6107(TE85L,F,M)

Enrgtech Part No: ET14929811
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Manufacturer Part No:
TPC6107(TE85L,F,M)
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Manufacturer: Toshiba Semiconductor and Storage

TPC6107-TE85L-F-M- Toshiba Semiconductor and Storage TPC6107(TE85L,F,M)

Product Information

FET Feature:

HTSUS:

8541.21.0095

Vgs(th) (Max) @ Id:

1.2V @ 200µA

Operating Temperature:

150°C (TJ)

Package / Case:

SOT-23-6 Thin, TSOT-23-6

Rds On (Max) @ Id, Vgs:

55mOhm @ 2.2A, 4.5V

title:

TPC6107(TE85L,F,M)

FET Type:

P-Channel

Drive Voltage (Max Rds On, Min Rds On):

2V, 4.5V

Drain to Source Voltage (Vdss):

20 V

Vgs (Max):

±12V

Moisture Sensitivity Level (MSL):

1 (Unlimited)

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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is TPC6107(TE85L,F,M). It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.2v @ 200µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 55mohm @ 2.2a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2v, 4.5v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 700mw (ta). The product's input capacitance at maximum includes 680 pf @ 10 v. The product is available in surface mount configuration. The product u-mosiv, is a highly preferred choice for users. The maximum gate charge and given voltages include 9.8 nc @ 5 v. vs-6 (2.9x2.8) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 4.5a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to tpc6107, a base product number of the product. The product is designated with the ear99 code number.

Mosfets Prod Guide(Datasheets)

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