Toshiba Semiconductor and Storage SSM3K318T,LF

SSM3K318T-LF Toshiba Semiconductor and Storage SSM3K318T,LF
Toshiba Semiconductor and Storage

Product Information

Base Part Number:
RN2312
Detailed Description:
N-Channel 60V 2.5A (Ta) 700mW (Ta) Surface Mount TSM
Input Capacitance (Ciss) (Max) @ Vds:
235pF @ 30V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
107mOhm @ 2A, 10V
Series:
*
Gate Charge (Qg) (Max) @ Vgs:
7nC @ 10V
Supplier Device Package:
TSM
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
700mW (Ta)
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
2.5A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K318T,LF. Base Part Number: rn2312. It features n-channel 60v 2.5a (ta) 700mw (ta) surface mount tsm. The product's input capacitance at maximum includes 235pf @ 30v. The product is available in surface mount configuration. It has a maximum Rds On and voltage of 107mohm @ 2a, 10v. The maximum gate charge and given voltages include 7nc @ 10v. tsm is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 700mw (ta). The product has a 60v drain to source voltage. The continuous current drain at 25°C is 2.5a (ta). This product use mosfet (metal oxide) technology. The toshiba semiconductor and storage's product offers user-desired applications.

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