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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K316T(TE85L,F). Base Part Number: rn4911. It features n-channel 30v 4a (ta) 700mw (ta) surface mount tsm. The product's input capacitance at maximum includes 270pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has a 30v drain to source voltage. The maximum Vgs rate is ±12v. The maximum gate charge and given voltages include 4.3nc @ 4v. It has a maximum Rds On and voltage of 53mohm @ 3a, 10v. tsm is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 700mw (ta). The continuous current drain at 25°C is 4a (ta). This product use mosfet (metal oxide) technology. The toshiba semiconductor and storage's product offers user-desired applications.
For more information please check the datasheets.
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