Toshiba Semiconductor and Storage SSM3K316T(TE85L,F)
Product Information
Base Part Number:
RN4911
Detailed Description:
N-Channel 30V 4A (Ta) 700mW (Ta) Surface Mount TSM
Input Capacitance (Ciss) (Max) @ Vds:
270pF @ 10V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 1mA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±12V
Gate Charge (Qg) (Max) @ Vgs:
4.3nC @ 4V
Rds On (Max) @ Id, Vgs:
53mOhm @ 3A, 10V
Supplier Device Package:
TSM
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-236-3, SC-59, SOT-23-3
Power Dissipation (Max):
700mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
4A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Toshiba Semiconductor and Storage
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K316T(TE85L,F). Base Part Number: rn4911. It features n-channel 30v 4a (ta) 700mw (ta) surface mount tsm. The product's input capacitance at maximum includes 270pf @ 10v. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has a 30v drain to source voltage. The maximum Vgs rate is ±12v. The maximum gate charge and given voltages include 4.3nc @ 4v. It has a maximum Rds On and voltage of 53mohm @ 3a, 10v. tsm is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-236-3, sc-59, sot-23-3. The product carries maximum power dissipation 700mw (ta). The continuous current drain at 25°C is 4a (ta). This product use mosfet (metal oxide) technology. The toshiba semiconductor and storage's product offers user-desired applications.
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