Toshiba Semiconductor and Storage SSM3K302T(TE85L,F)
Product Information
FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
71mOhm @ 2A, 4V
Gate Charge (Qg) (Max) @ Vgs:
4.3 nC @ 4 V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4V
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±12V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
700mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
270 pF @ 10 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TSM
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3K302
ECCN:
EAR99
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Yes. We ship SSM3K302T(TE85L,F) Internationally to many countries around the world.
This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3K302T(TE85L,F). It is assigned with possible HTSUS value of 8541.21.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 71mohm @ 2a, 4v. The maximum gate charge and given voltages include 4.3 nc @ 4 v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 700mw (ta). The product's input capacitance at maximum includes 270 pf @ 10 v. The product is available in surface mount configuration. tsm is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 3a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm3k302, a base product number of the product. The product is designated with the ear99 code number.
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