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Toshiba Semiconductor and Storage SSM3J36MFV,L3F

SSM3J36MFV-L3F Toshiba Semiconductor and Storage SSM3J36MFV,L3F
Toshiba Semiconductor and Storage

Product Information

Base Part Number:
TC74VCX541
Detailed Description:
P-Channel 20V 330mA (Ta) 150mW (Ta) Surface Mount VESM
Input Capacitance (Ciss) (Max) @ Vds:
43pF @ 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
1.31Ohm @ 100mA, 4.5V
Series:
*
Gate Charge (Qg) (Max) @ Vgs:
1.2nC @ 4V
Supplier Device Package:
VESM
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
SOT-723
Power Dissipation (Max):
150mW (Ta)
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
330mA (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J36MFV,L3F. Base Part Number: tc74vcx541. It features p-channel 20v 330ma (ta) 150mw (ta) surface mount vesm. The product's input capacitance at maximum includes 43pf @ 10v. The product is available in surface mount configuration. It has a maximum Rds On and voltage of 1.31ohm @ 100ma, 4.5v. The maximum gate charge and given voltages include 1.2nc @ 4v. vesm is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in sot-723. The product carries maximum power dissipation 150mw (ta). The product has a 20v drain to source voltage. The continuous current drain at 25°C is 330ma (ta). This product use mosfet (metal oxide) technology. The toshiba semiconductor and storage's product offers user-desired applications.

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