Toshiba Semiconductor and Storage SSM3J35MFV,L3F

SSM3J35MFV-L3F Toshiba Semiconductor and Storage SSM3J35MFV,L3F
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
RoHS Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
SOT-723
Rds On (Max) @ Id, Vgs:
8Ohm @ 50mA, 4V
title:
SSM3J35MFV,L3F
Vgs(th) (Max) @ Id:
-
REACH Status:
REACH Unaffected
edacadModel:
SSM3J35MFV,L3F Models
FET Type:
P-Channel
edacadModelUrl:
/en/models/4305158
Drain to Source Voltage (Vdss):
20 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
150mW (Ta)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
12.2 pF @ 3 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
VESM
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
100mA (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3J35
ECCN:
EAR99
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J35MFV,L3F. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in sot-723. It has a maximum Rds On and voltage of 8ohm @ 50ma, 4v. In addition, it is reach unaffected. It carries FET type p-channel. The product has a 20 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 150mw (ta). It has a long 12 weeks standard lead time. The product's input capacitance at maximum includes 12.2 pf @ 3 v. The product is available in surface mount configuration. vesm is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 100ma (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm3j35, a base product number of the product. The product is designated with the ear99 code number.

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