Toshiba Semiconductor and Storage SSM3J168F,LF

SSM3J168F-LF Toshiba Semiconductor and Storage SSM3J168F,LF
Toshiba Semiconductor and Storage

Product Information

Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
P-Channel 60V 400mA (Ta) 1.2W (Ta) Surface Mount S-Mini
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
150°C
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
SSM3J168
Gate Charge (Qg) (Max) @ Vgs:
3nC @ 10V
Rds On (Max) @ Id, Vgs:
1.9Ohm @ 100mA, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:
82pF @ 10V
Mounting Type:
Surface Mount
Series:
U-MOSVI
Supplier Device Package:
S-Mini
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
400mA (Ta)
Customer Reference:
Power Dissipation (Max):
1.2W (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J168F,LF. It has typical 16 weeks of manufacturer standard lead time. It features p-channel 60v 400ma (ta) 1.2w (ta) surface mount s-mini. The typical Vgs (th) (max) of the product is 2v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Base Part Number: ssm3j168. The maximum gate charge and given voltages include 3nc @ 10v. It has a maximum Rds On and voltage of 1.9ohm @ 100ma, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 60v drain to source voltage. The maximum Vgs rate is +20v, -16v. The product's input capacitance at maximum includes 82pf @ 10v. The product is available in surface mount configuration. The product u-mosvi, is a highly preferred choice for users. s-mini is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 400ma (ta). The product carries maximum power dissipation 1.2w (ta). This product use mosfet (metal oxide) technology.

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