Toshiba Semiconductor and Storage SSM3J14TTE85LF

SSM3J14TTE85LF Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
85mOhm @ 1.35A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
413 pF @ 15 V
Mounting Type:
Surface Mount
Series:
U-MOSII
Supplier Device Package:
TSM
Current - Continuous Drain (Id) @ 25°C:
2.7A (Ta)
Power Dissipation (Max):
700mW (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3J14
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3J14TTE85LF. It is assigned with possible HTSUS value of 8541.21.0095. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 85mohm @ 1.35a, 10v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 413 pf @ 15 v. The product is available in surface mount configuration. The product u-mosii, is a highly preferred choice for users. tsm is the supplier device package value. The continuous current drain at 25°C is 2.7a (ta). The product carries maximum power dissipation 700mw (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm3j14, a base product number of the product. The product is designated with the ear99 code number.

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FAQs

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