Toshiba Semiconductor and Storage SSM3H137TU,LF

SSM3H137TU-LF Toshiba Semiconductor and Storage SSM3H137TU,LF
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.7V @ 1mA
Operating Temperature:
150°C
Package / Case:
3-SMD, Flat Leads
Rds On (Max) @ Id, Vgs:
240mOhm @ 1A, 10V
edacadModel:
SSM3H137TU,LF Models
Gate Charge (Qg) (Max) @ Vgs:
3 nC @ 10 V
RoHS Status:
ROHS3 Compliant
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4V, 10V
edacadModelUrl:
/en/models/8611155
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
34 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
800mW (Ta)
Input Capacitance (Ciss) (Max) @ Vds:
119 pF @ 10 V
standardLeadTime:
12 Weeks
Mounting Type:
Surface Mount
Series:
U-MOSIV
Supplier Device Package:
UFM
Current - Continuous Drain (Id) @ 25°C:
2A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM3H137
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM3H137TU,LF. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.7v @ 1ma. The product has 150°c operating temperature range. Moreover, the product comes in 3-smd, flat leads. It has a maximum Rds On and voltage of 240mohm @ 1a, 10v. The maximum gate charge and given voltages include 3 nc @ 10 v. The product is rohs3 compliant. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 10v. It is shipped in tape & reel (tr) package . The product has a 34 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 800mw (ta). The product's input capacitance at maximum includes 119 pf @ 10 v. It has a long 12 weeks standard lead time. The product is available in surface mount configuration. The product u-mosiv, is a highly preferred choice for users. ufm is the supplier device package value. The continuous current drain at 25°C is 2a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm3h137, a base product number of the product. The product is designated with the ear99 code number.

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