Maximum Continuous Drain Current:
9 A
Transistor Material:
Si
Width:
1.35mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.5V
Package Type:
SC-70
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.5V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
7.75 nC @ 10 V
Channel Type:
N
Length:
2.2mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
13.6 W
Series:
TrenchFET
Maximum Gate Source Voltage:
±20 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
60 mΩ
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
PowerPAK® SC-70-6
Rds On (Max) @ Id, Vgs:
32mOhm @ 3A, 10V
title:
SQA442EJ-T1_GE3
Vgs(th) (Max) @ Id:
2.5V @ 250µA
REACH Status:
Vendor Undefined
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
13.6W (Tc)
Qualification:
AEC-Q101
standardLeadTime:
28 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
636 pF @ 25 V
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
TrenchFET®
Gate Charge (Qg) (Max) @ Vgs:
9.7 nC @ 10 V
Supplier Device Package:
PowerPAK® SC-70-6
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQA442
ECCN:
EAR99
