Vishay Siliconix SQ2398ES-T1_GE3
Product Information
Detailed Description:
N-Channel 100V 1.6A (Tc) 2W (Tc) Surface Mount SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
Base Part Number:
SQ2398
Gate Charge (Qg) (Max) @ Vgs:
3.4nC @ 10V
Rds On (Max) @ Id, Vgs:
300mOhm @ 1.5A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
152pF @ 50V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101, TrenchFET®
Supplier Device Package:
SOT-23-3 (TO-236)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
1.6A (Tc)
Customer Reference:
Power Dissipation (Max):
2W (Tc)
Technology:
MOSFET (Metal Oxide)
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FAQs
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Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
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Yes. We ship SQ2398ES-T1_GE3 Internationally to many countries around the world.
This is manufactured by Vishay Siliconix. The manufacturer part number is SQ2398ES-T1_GE3. It features n-channel 100v 1.6a (tc) 2w (tc) surface mount sot-23-3 (to-236). The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Base Part Number: sq2398. The maximum gate charge and given voltages include 3.4nc @ 10v. It has a maximum Rds On and voltage of 300mohm @ 1.5a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The vishay siliconix's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 152pf @ 50v. The product is available in surface mount configuration. The product automotive, aec-q101, trenchfet®, is a highly preferred choice for users. sot-23-3 (to-236) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 1.6a (tc). The product carries maximum power dissipation 2w (tc). This product use mosfet (metal oxide) technology.
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