Vishay Siliconix SQ2360EES-T1-GE3

SQ2360EES-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Package / Case:
TO-236-3, SC-59, SOT-23-3
Rds On (Max) @ Id, Vgs:
85mOhm @ 6A, 10V
edacadModel:
SQ2360EES-T1-GE3 Models
Gate Charge (Qg) (Max) @ Vgs:
12 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
edacadModelUrl:
/en/models/2813471
Package:
Cut Tape (CT)
Drain to Source Voltage (Vdss):
60 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
370 pF @ 25 V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
SOT-23-3 (TO-236)
Current - Continuous Drain (Id) @ 25°C:
4.4A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQ2360
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SQ2360EES-T1-GE3. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. Moreover, the product comes in to-236-3, sc-59, sot-23-3. It has a maximum Rds On and voltage of 85mohm @ 6a, 10v. The maximum gate charge and given voltages include 12 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. It is shipped in cut tape (ct) package . The product has a 60 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 370 pf @ 25 v. The product is available in surface mount configuration. sot-23-3 (to-236) is the supplier device package value. The continuous current drain at 25°C is 4.4a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sq2360, a base product number of the product. The product is designated with the ear99 code number.

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Multiple Devices 03/Mar/2015(PCN Obsolescence/ EOL)
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SQ2360EES(Datasheets)

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FAQs

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