Maximum Continuous Drain Current:
440 mA
Transistor Material:
Si
Width:
1.35mm
Automotive Standard:
AEC-Q101
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
0.45V
Package Type:
SC-70
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
2.7 nC @ 4.5 V
Channel Type:
N
Length:
2.2mm
Pin Count:
6
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
430 mW
Series:
TrenchFET
Maximum Gate Source Voltage:
±8 V
Height:
1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
3.1 Ω
FET Feature:
-
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
1.41Ohm @ 2A, 1.5V
Gate Charge (Qg) (Max) @ Vgs:
4.1 nC @ 4.5 V
Vgs(th) (Max) @ Id:
1V @ 250µA
edacadModel:
SQ1464EEH-T1_GE3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V
edacadModelUrl:
/en/models/8572040
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60 V
Vgs (Max):
±8V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
430mW (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
140 pF @ 25 V
Qualification:
AEC-Q101
standardLeadTime:
17 Weeks
Mounting Type:
Surface Mount
Grade:
Automotive
Series:
TrenchFET®
Supplier Device Package:
SC-70-6
Current - Continuous Drain (Id) @ 25°C:
440mA (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SQ1464
ECCN:
EAR99
