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This is manufactured by Vishay Siliconix. The manufacturer part number is SIS606BDN-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8. It has a maximum Rds On and voltage of 17.4mohm @ 10a, 10v. The maximum gate charge and given voltages include 30 nc @ 10 v. The typical Vgs (th) (max) of the product is 4v @ 250µa. In addition, it is vendor undefined. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 7.5v, 10v. The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 3.7w (ta), 52w (tc). It has a long 18 weeks standard lead time. The product's input capacitance at maximum includes 1470 pf @ 50 v. The product is available in surface mount configuration. The product trenchfet® gen iv, is a highly preferred choice for users. powerpak® 1212-8 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 9.4a (ta), 35.3a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sis606, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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