Vishay Siliconix SIS447DN-T1-GE3

Enrgtech Part No: ET14865799
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Manufacturer Part No:
SIS447DN-T1-GE3
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Manufacturer: Vishay Siliconix

Product Information

FET Feature:

HTSUS:

8541.29.0095

RoHS Status:

ROHS3 Compliant

Operating Temperature:

-55°C ~ 150°C (TJ)

Package / Case:

PowerPAK® 1212-8

Rds On (Max) @ Id, Vgs:

7.1mOhm @ 20A, 10V

title:

SIS447DN-T1-GE3

Vgs(th) (Max) @ Id:

1.2V @ 250µA

REACH Status:

Vendor Undefined

FET Type:

P-Channel

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 10V

Drain to Source Voltage (Vdss):

20 V

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This is manufactured by Vishay Siliconix. The manufacturer part number is SIS447DN-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® 1212-8. It has a maximum Rds On and voltage of 7.1mohm @ 20a, 10v. The typical Vgs (th) (max) of the product is 1.2v @ 250µa. In addition, it is vendor undefined. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 10v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 52w (tc). It has a long 22 weeks standard lead time. The product's input capacitance at maximum includes 5590 pf @ 10 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 181 nc @ 10 v. powerpak® 1212-8 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 18a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sis447, a base product number of the product. The product is designated with the ear99 code number.

New Solder Plating Site 18/Apr/2023(PCN Assembly/Origin)

SIS447DN(Datasheets)

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