Vishay Siliconix SIRA12BDP-T1-GE3

SIRA12BDP-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2.4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® SO-8
Rds On (Max) @ Id, Vgs:
4.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs:
32 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
Vendor Undefined
edacadModel:
SIRA12BDP-T1-GE3 Models
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
edacadModelUrl:
/en/models/9084113
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
+20V, -16V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5W (Ta), 38W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1470 pF @ 15 V
standardLeadTime:
18 Weeks
Mounting Type:
Surface Mount
Series:
TrenchFET® Gen IV
Supplier Device Package:
PowerPAK® SO-8
Current - Continuous Drain (Id) @ 25°C:
27A (Ta), 60A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIRA12
ECCN:
EAR99
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SIRA12BDP-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2.4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8. It has a maximum Rds On and voltage of 4.3mohm @ 10a, 10v. The maximum gate charge and given voltages include 32 nc @ 10 v. The product is rohs3 compliant. In addition, it is vendor undefined. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. It is shipped in tape & reel (tr) package . The product has a 30 v drain to source voltage. The maximum Vgs rate is +20v, -16v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 5w (ta), 38w (tc). The product's input capacitance at maximum includes 1470 pf @ 15 v. It has a long 18 weeks standard lead time. The product is available in surface mount configuration. The product trenchfet® gen iv, is a highly preferred choice for users. powerpak® so-8 is the supplier device package value. The continuous current drain at 25°C is 27a (ta), 60a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sira12, a base product number of the product. The product is designated with the ear99 code number.

pdf icon
SIRA 04/Mar/2022(PCN Assembly/Origin)
pdf icon
SIRA12BDP(Datasheets)

Reviews

  • Be the first to review.

FAQs

Yes. You can also search SIRA12BDP-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET14865770. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIRA12BDP-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIRA12BDP-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIRA12BDP-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14865770 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14865770.
Yes. We ship SIRA12BDP-T1-GE3 Internationally to many countries around the world.