Vishay Siliconix SIHB33N60E-GE3

SIHB33N60E-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Rds On (Max) @ Id, Vgs:
99mOhm @ 16.5A, 10V
Gate Charge (Qg) (Max) @ Vgs:
150 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Bulk
Drain to Source Voltage (Vdss):
600 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
278W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
3508 pF @ 100 V
standardLeadTime:
21 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-263 (D2PAK)
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHB33
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SIHB33N60E-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 99mohm @ 16.5a, 10v. The maximum gate charge and given voltages include 150 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in bulk package . The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 278w (tc). The product's input capacitance at maximum includes 3508 pf @ 100 v. It has a long 21 weeks standard lead time. The product is available in surface mount configuration. to-263 (d2pak) is the supplier device package value. The continuous current drain at 25°C is 33a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sihb33, a base product number of the product. The product is designated with the ear99 code number.

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SIL-079-2014-Rev-0 26/Sep/2014(PCN Assembly/Origin)
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SiHB33N60E(Datasheets)

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FAQs

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You will get a confirmation email regarding your order of Vishay Siliconix SIHB33N60E-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIHB33N60E-GE3.
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