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This is manufactured by Vishay Siliconix. The manufacturer part number is SIHB18N60E-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d2pak (2 leads + tab), to-263ab. It has a maximum Rds On and voltage of 202mohm @ 9a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product has a 600 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 179w (tc). It has a long 20 weeks standard lead time. The product's input capacitance at maximum includes 1640 pf @ 100 v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 92 nc @ 10 v. to-263 (d2pak) is the supplier device package value. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 18a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sihb18, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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