Maximum Continuous Drain Current:
2.8 A
Transistor Material:
Si
Width:
4.7mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
800 V
Maximum Gate Threshold Voltage:
4V
Package Type:
TO-220
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
2V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
9.8 nC @ 10 V
Channel Type:
N
Length:
10.3mm
Pin Count:
3
Channel Mode:
Enhancement
Mounting Type:
Through Hole
Maximum Power Dissipation:
29 W
Series:
E-Series
Maximum Gate Source Voltage:
±30 V
Height:
15.3mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.75 Ω
FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
TO-220-3 Full Pack
Rds On (Max) @ Id, Vgs:
2.75Ohm @ 1A, 10V
title:
SIHA2N80E-GE3
Vgs(th) (Max) @ Id:
4V @ 250µA
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Drain to Source Voltage (Vdss):
800 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
29W (Tc)
standardLeadTime:
15 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
315 pF @ 100 V
Mounting Type:
Through Hole
Series:
E
Gate Charge (Qg) (Max) @ Vgs:
19.6 nC @ 10 V
Supplier Device Package:
TO-220 Full Pack
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
2.8A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIHA2
ECCN:
EAR99
