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Vishay Siliconix SIE878DF-T1-GE3

SIE878DF-T1-GE3 Vishay Siliconix
SIE878DF-T1-GE3
Vishay Siliconix

Product Information

Detailed Description:
N-Channel 25V 45A (Tc) 5.2W (Ta), 25W (Tc) Surface Mount 10-PolarPAK® (L)
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
10-PolarPAK® (L)
Base Part Number:
SIE878
Gate Charge (Qg) (Max) @ Vgs:
36nC @ 10V
Rds On (Max) @ Id, Vgs:
5.2mOhm @ 20A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1400pF @ 12.5V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
10-PolarPAK® (L)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
45A (Tc)
Customer Reference:
Power Dissipation (Max):
5.2W (Ta), 25W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by Vishay Siliconix. The manufacturer part number is SIE878DF-T1-GE3. It features n-channel 25v 45a (tc) 5.2w (ta), 25w (tc) surface mount 10-polarpak® (l). The typical Vgs (th) (max) of the product is 2.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 10-polarpak® (l). Base Part Number: sie878. The maximum gate charge and given voltages include 36nc @ 10v. It has a maximum Rds On and voltage of 5.2mohm @ 20a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The vishay siliconix's product offers user-desired applications. The product has a 25v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 1400pf @ 12.5v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 10-polarpak® (l) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 45a (tc). The product carries maximum power dissipation 5.2w (ta), 25w (tc). This product use mosfet (metal oxide) technology.

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Mult Mosfet EOL 30/Aug/2018(PCN Obsolescence/ EOL)
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SIE878DF(Datasheets)

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FAQs

Yes. You can also search SIE878DF-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET14865527. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIE878DF-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIE878DF-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIE878DF-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14865527 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14865527.
Yes. We ship SIE878DF-T1-GE3 Internationally to many countries around the world.