Vishay Siliconix SIE836DF-T1-GE3

SIE836DF-T1-GE3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
10-PolarPAK® (SH)
Rds On (Max) @ Id, Vgs:
130mOhm @ 4.1A, 10V
Gate Charge (Qg) (Max) @ Vgs:
41 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
200 V
Vgs (Max):
±30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
5.2W (Ta), 104W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
1200 pF @ 100 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
10-PolarPAK® (SH)
Current - Continuous Drain (Id) @ 25°C:
18.3A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SIE836
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SIE836DF-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 10-polarpak® (sh). It has a maximum Rds On and voltage of 130mohm @ 4.1a, 10v. The maximum gate charge and given voltages include 41 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 10v. It is shipped in tape & reel (tr) package . The product has a 200 v drain to source voltage. The maximum Vgs rate is ±30v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 5.2w (ta), 104w (tc). The product's input capacitance at maximum includes 1200 pf @ 100 v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 10-polarpak® (sh) is the supplier device package value. The continuous current drain at 25°C is 18.3a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sie836, a base product number of the product. The product is designated with the ear99 code number.

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PCN- SIL-0582013 05/Dec/2013(PCN Obsolescence/ EOL)
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SIE836DF(Datasheets)

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FAQs

Yes. You can also search SIE836DF-T1-GE3 on website for other similar products.
We accept all major payment methods for all products including ET14865517. Please check your shopping cart at the time of order.
You can order Vishay Siliconix brand products with SIE836DF-T1-GE3 directly through our website or call us at +44 (0) 3303 800 157 or email our support team at sales@enrgtech.co.uk.
Yes. Our products in Single FETs, MOSFETs category are shipped in lowest possible time.
You will get a confirmation email regarding your order of Vishay Siliconix SIE836DF-T1-GE3. You can also check on our website or by contacting our customer support team for further order details on Vishay Siliconix SIE836DF-T1-GE3.
We use our internationally recognized delivery partners UPS/DHL. Collection of ET14865517 can also be arranged for the customer by international shipments through contacting our customer support team. Additionally, you can also search "Vishay Siliconix" products on our website by using Enrgtech's Unique Manufacturing Part Number ET14865517.
Yes. We ship SIE836DF-T1-GE3 Internationally to many countries around the world.