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This is manufactured by Vishay Siliconix. The manufacturer part number is SIDR638DP-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® so-8. It has a maximum Rds On and voltage of 0.88mohm @ 20a, 10v. The typical Vgs (th) (max) of the product is 2.3v @ 250µa. In addition, it is vendor undefined. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 40 v drain to source voltage. The maximum Vgs rate is +20v, -16v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 125w (tc). It has a long 28 weeks standard lead time. The product's input capacitance at maximum includes 10500 pf @ 20 v. The product is available in surface mount configuration. The product trenchfet® gen iv, is a highly preferred choice for users. The maximum gate charge and given voltages include 204 nc @ 10 v. powerpak® so-8dc is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 100a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to sidr638, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
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