Vishay Siliconix SI6467BDQ-T1-E3

SI6467BDQ-T1-E3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Package / Case:
8-TSSOP (0.173", 4.40mm Width)
Rds On (Max) @ Id, Vgs:
12.5mOhm @ 8A, 4.5V
title:
SI6467BDQ-T1-E3
Vgs(th) (Max) @ Id:
850mV @ 450µA
REACH Status:
REACH Unaffected
FET Type:
P-Channel
Drain to Source Voltage (Vdss):
12 V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Mounting Type:
Surface Mount
Series:
TrenchFET®
Gate Charge (Qg) (Max) @ Vgs:
70 nC @ 4.5 V
Supplier Device Package:
8-TSSOP
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
6.8A (Ta)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI6467
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI6467BDQ-T1-E3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. Moreover, the product comes in 8-tssop (0.173", 4.40mm width). It has a maximum Rds On and voltage of 12.5mohm @ 8a, 4.5v. The typical Vgs (th) (max) of the product is 850mv @ 450µa. In addition, it is reach unaffected. It carries FET type p-channel. The product has a 12 v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. The maximum gate charge and given voltages include 70 nc @ 4.5 v. 8-tssop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 6.8a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to si6467, a base product number of the product. The product is designated with the ear99 code number.

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SIL-1072014 Rev0 17/Dec/2014(PCN Obsolescence/ EOL)
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Material Compliance(Environmental Information)
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Vishay Aluminum Capacitor and Energy Storage REACH(Environmental Information)

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FAQs

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