Vishay Siliconix SI5480DU-T1-E3

Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
PowerPAK® ChipFET™ Single
Rds On (Max) @ Id, Vgs:
16mOhm @ 7.2A, 10V
Gate Charge (Qg) (Max) @ Vgs:
34 nC @ 10 V
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Drain to Source Voltage (Vdss):
30 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1230 pF @ 15 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
PowerPAK® ChipFET™ Single
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Power Dissipation (Max):
3.1W (Ta), 31W (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI5480
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI5480DU-T1-E3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in powerpak® chipfet™ single. It has a maximum Rds On and voltage of 16mohm @ 7.2a, 10v. The maximum gate charge and given voltages include 34 nc @ 10 v. The typical Vgs (th) (max) of the product is 3v @ 250µa. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product has a 30 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1230 pf @ 15 v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. powerpak® chipfet™ single is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 12a (tc). The product carries maximum power dissipation 3.1w (ta), 31w (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to si5480, a base product number of the product. The product is designated with the ear99 code number.

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