Vishay Siliconix SI4463BDY-T1-GE3

Enrgtech Part No: ET14864835
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Manufacturer Part No:
SI4463BDY-T1-GE3
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Manufacturer: Vishay Siliconix

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Product Information

FET Feature:

HTSUS:

8541.29.0095

RoHS Status:

ROHS3 Compliant

Operating Temperature:

-55°C ~ 150°C (TJ)

Package / Case:

8-SOIC (0.154", 3.90mm Width)

Rds On (Max) @ Id, Vgs:

11mOhm @ 13.7A, 10V

title:

SI4463BDY-T1-GE3

Vgs(th) (Max) @ Id:

1.4V @ 250µA

REACH Status:

REACH info available upon request

FET Type:

P-Channel

Drive Voltage (Max Rds On, Min Rds On):

2.5V, 10V

Drain to Source Voltage (Vdss):

20 V

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This is manufactured by Vishay Siliconix. The manufacturer part number is SI4463BDY-T1-GE3. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 11mohm @ 13.7a, 10v. The typical Vgs (th) (max) of the product is 1.4v @ 250µa. In addition, it is reach info available upon request. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 10v. The product has a 20 v drain to source voltage. The maximum Vgs rate is ±12v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 1.5w (ta). The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. The maximum gate charge and given voltages include 56 nc @ 4.5 v. 8-soic is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 9.8a (ta). This product use mosfet (metal oxide) technology. Moreover, it corresponds to si4463, a base product number of the product. The product is designated with the ear99 code number.

New Solder Plating Site 18/Apr/2023(PCN Assembly/Origin)

SI4463BDY(Datasheets)

Mult Dev EOL 2/May/2024(PCN Obsolescence/ EOL)

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