Vishay Siliconix SI4102DY-T1-E3

SI4102DY-T1-E3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
4V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
158mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 10 V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
6V, 10V
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
100 V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Power Dissipation (Max):
2.4W (Ta), 4.8W (Tc)
Input Capacitance (Ciss) (Max) @ Vds:
370 pF @ 50 V
Mounting Type:
Surface Mount
Series:
TrenchFET®
Supplier Device Package:
8-SOIC
Current - Continuous Drain (Id) @ 25°C:
3.8A (Tc)
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4102
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI4102DY-T1-E3. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 4v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 158mohm @ 2.7a, 10v. The maximum gate charge and given voltages include 11 nc @ 10 v. The product is rohs3 compliant. In addition, it is reach unaffected. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 6v, 10v. It is shipped in tape & reel (tr) package . The product has a 100 v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product carries maximum power dissipation 2.4w (ta), 4.8w (tc). The product's input capacitance at maximum includes 370 pf @ 50 v. The product is available in surface mount configuration. The product trenchfet®, is a highly preferred choice for users. 8-soic is the supplier device package value. The continuous current drain at 25°C is 3.8a (tc). This product use mosfet (metal oxide) technology. Moreover, it corresponds to si4102, a base product number of the product. The product is designated with the ear99 code number.

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SI4102DY(Datasheets)

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FAQs

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