ON Semiconductor WPB4002-1E

ON Semiconductor

Product Information

Base Part Number:
WPB40
Detailed Description:
N-Channel 600V 23A (Ta) 2.5W (Ta), 220W (Tc) Through Hole TO-3P-3L
Input Capacitance (Ciss) (Max) @ Vds:
2200pF @ 30V
Drive Voltage (Max Rds On, Min Rds On):
10V
Mounting Type:
Through Hole
Rds On (Max) @ Id, Vgs:
360mOhm @ 11.5A, 10V
Drain to Source Voltage (Vdss):
600V
Vgs (Max):
±30V
Gate Charge (Qg) (Max) @ Vgs:
84nC @ 10V
Supplier Device Package:
TO-3P-3L
Packaging:
Tube
Operating Temperature:
150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-3P-3, SC-65-3
Power Dissipation (Max):
2.5W (Ta), 220W (Tc)
Current - Continuous Drain (Id) @ 25°C:
23A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is WPB4002-1E. Base Part Number: wpb40. It features n-channel 600v 23a (ta) 2.5w (ta), 220w (tc) through hole to-3p-3l. The product's input capacitance at maximum includes 2200pf @ 30v. The drive voltage (maximum and minimum Rds On) of the product includes 10v. The product is available in through hole configuration. It has a maximum Rds On and voltage of 360mohm @ 11.5a, 10v. The product has a 600v drain to source voltage. The maximum Vgs rate is ±30v. The maximum gate charge and given voltages include 84nc @ 10v. to-3p-3l is the supplier device package value. In addition, tube is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-3p-3, sc-65-3. The product carries maximum power dissipation 2.5w (ta), 220w (tc). The continuous current drain at 25°C is 23a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Multiple Devices 24/Jul/2015(PCN Obsolescence/ EOL)

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