ON Semiconductor RFP3055LE

RFP3055LE ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
RFP30
Detailed Description:
N-Channel 60V 11A (Tc) 38W (Tc) Through Hole TO-220-3
Input Capacitance (Ciss) (Max) @ Vds:
350pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
5V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±16V
Gate Charge (Qg) (Max) @ Vgs:
11.3nC @ 10V
Rds On (Max) @ Id, Vgs:
107mOhm @ 8A, 5V
Supplier Device Package:
TO-220-3
Packaging:
Tube
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3
Power Dissipation (Max):
38W (Tc)
Current - Continuous Drain (Id) @ 25°C:
11A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is RFP3055LE. Base Part Number: rfp30. It features n-channel 60v 11a (tc) 38w (tc) through hole to-220-3. The product's input capacitance at maximum includes 350pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 5v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has a 60v drain to source voltage. The maximum Vgs rate is ±16v. The maximum gate charge and given voltages include 11.3nc @ 10v. It has a maximum Rds On and voltage of 107mohm @ 8a, 5v. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 38w (tc). The continuous current drain at 25°C is 11a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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RFD3055LE,LESM,%20RFP3055LE(Datasheets)

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