ON Semiconductor RFP2N10L

RFP2N10L ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
RFP2N
Detailed Description:
N-Channel 100V 2A (Tc) 25W (Tc) Through Hole TO-220-3
Input Capacitance (Ciss) (Max) @ Vds:
200pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±10V
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
1.05Ohm @ 2A, 5V
Supplier Device Package:
TO-220-3
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3
Power Dissipation (Max):
25W (Tc)
Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is RFP2N10L. Base Part Number: rfp2n. It features n-channel 100v 2a (tc) 25w (tc) through hole to-220-3. The product's input capacitance at maximum includes 200pf @ 25v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has a 100v drain to source voltage. The maximum Vgs rate is ±10v. The drive voltage (maximum and minimum Rds On) of the product includes 5v. It has a maximum Rds On and voltage of 1.05ohm @ 2a, 5v. to-220-3 is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 25w (tc). The continuous current drain at 25°C is 2a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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TO220B03 Pkg Drawing(Datasheets)
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RFP2N08L, RFP2N10L(Datasheets)

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