Maximum Drain Source Voltage:
100 V
Mounting Type:
Through Hole
Channel Mode:
Enhancement
Maximum Power Dissipation:
60 W
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
9.4mm
Width:
4.83mm
Length:
10.67mm
Minimum Gate Threshold Voltage:
1V
Package Type:
TO-220AB
Number of Elements per Chip:
1
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
12 A
Transistor Material:
Si
Maximum Drain Source Resistance:
200 mΩ
Channel Type:
N
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
49 Weeks
Base Part Number:
RFP12N10
Detailed Description:
N-Channel 100V 12A (Tc) 60W (Tc) Through Hole TO-220-3
Input Capacitance (Ciss) (Max) @ Vds:
900pF @ 25V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±10V
Drive Voltage (Max Rds On, Min Rds On):
5V
Rds On (Max) @ Id, Vgs:
200mOhm @ 12A, 5V
Supplier Device Package:
TO-220-3
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3
Power Dissipation (Max):
60W (Tc)
Current - Continuous Drain (Id) @ 25°C:
12A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
