ON Semiconductor RFD16N05LSM

RFD16N05LSM ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
RFD16
Detailed Description:
N-Channel 50V 16A (Tc) 60W (Tc) Surface Mount TO-252AA
Drive Voltage (Max Rds On, Min Rds On):
4V, 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 250mA
Drain to Source Voltage (Vdss):
50V
Vgs (Max):
±10V
Gate Charge (Qg) (Max) @ Vgs:
80nC @ 10V
Rds On (Max) @ Id, Vgs:
47mOhm @ 16A, 5V
Supplier Device Package:
TO-252AA
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
60W (Tc)
Current - Continuous Drain (Id) @ 25°C:
16A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is RFD16N05LSM. Base Part Number: rfd16. It features n-channel 50v 16a (tc) 60w (tc) surface mount to-252aa. The drive voltage (maximum and minimum Rds On) of the product includes 4v, 5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2v @ 250ma. The product has a 50v drain to source voltage. The maximum Vgs rate is ±10v. The maximum gate charge and given voltages include 80nc @ 10v. It has a maximum Rds On and voltage of 47mohm @ 16a, 5v. to-252aa is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The product carries maximum power dissipation 60w (tc). The continuous current drain at 25°C is 16a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Multiple Devices 14/Mar/2011(PCN Obsolescence/ EOL)
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RFD16N05L(SM)(Datasheets)

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