Maximum Continuous Drain Current:
100 A
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
60 V
Maximum Gate Threshold Voltage:
2.6V
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
160 nC @ 10 V
Channel Type:
P
Length:
5.1mm
Pin Count:
5
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
200 W
Maximum Gate Source Voltage:
±20 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.5V
Maximum Drain Source Resistance:
7.7 mΩ
Detailed Description:
P-Channel 60V 15A (Ta), 100A (Tc) 3.8W (Ta), 200W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:
2.6V @ 1mA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN, 5 Leads
Base Part Number:
NVMFS5
Gate Charge (Qg) (Max) @ Vgs:
160nC @ 10V
Rds On (Max) @ Id, Vgs:
7.7mOhm @ 50A, 10V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
7700pF @ 20V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
15A (Ta), 100A (Tc)
Customer Reference:
Power Dissipation (Max):
3.8W (Ta), 200W (Tc)
Technology:
MOSFET (Metal Oxide)
