ON Semiconductor NVD6416ANLT4G-001

ON Semiconductor

Product Information

Manufacturer Standard Lead Time:
15 Weeks
Detailed Description:
N-Channel 100V 19A (Tc) 71W (Tc) Surface Mount DPAK-3
Vgs(th) (Max) @ Id:
2.2V @ 250µA
Operating Temperature:
-55°C ~ 175°C
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Gate Charge (Qg) (Max) @ Vgs:
40nC @ 10V
Rds On (Max) @ Id, Vgs:
74 mOhm @ 10A, 10V
FET Type:
N-Channel
Standard Package:
2,500
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
100V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1000pF @ 25V
Mounting Type:
Surface Mount
Supplier Device Package:
DPAK-3
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
19A (Tc)
Power Dissipation (Max):
71W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is NVD6416ANLT4G-001. It has typical 15 weeks of manufacturer standard lead time. It features n-channel 100v 19a (tc) 71w (tc) surface mount dpak-3. The typical Vgs (th) (max) of the product is 2.2v @ 250µa. The product has -55°c ~ 175°c operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The maximum gate charge and given voltages include 40nc @ 10v. It has a maximum Rds On and voltage of 74 mohm @ 10a, 10v. It carries FET type n-channel. It is available in the standard package of 2,500. The on semiconductor's product offers user-desired applications. The product has a 100v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 1000pf @ 25v. The product is available in surface mount configuration. dpak-3 is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 19a (tc). The product carries maximum power dissipation 71w (tc). This product use mosfet (metal oxide) technology.

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