Maximum Continuous Drain Current:
88 A
Width:
6.22mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2.2V
Package Type:
DPAK
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
21 nC @ 4.5 V
Channel Type:
N
Length:
6.73mm
Pin Count:
4
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
56 W
Maximum Gate Source Voltage:
±20 V
Height:
2.25mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
3.9 mΩ
Detailed Description:
N-Channel 40V 20A (Ta), 84A (Tc) 3.1W (Ta), 56W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
2.2V @ 70µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
NVD5C454
Gate Charge (Qg) (Max) @ Vgs:
43nC @ 10V
Rds On (Max) @ Id, Vgs:
3.9mOhm @ 40A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
2600pF @ 25V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
20A (Ta), 84A (Tc)
Customer Reference:
Power Dissipation (Max):
3.1W (Ta), 56W (Tc)
Technology:
MOSFET (Metal Oxide)
