ON Semiconductor NVD5802NT4G-TB01

NVD5802NT4G-TB01 ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
N-Channel 40V 16.4A (Ta), 101A (Tc) 2.5W (Ta), 93.75W (Tc) Surface Mount DPAK
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Base Part Number:
NVD580
Gate Charge (Qg) (Max) @ Vgs:
100nC @ 10V
Rds On (Max) @ Id, Vgs:
4.4mOhm @ 50A, 10V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5300pF @ 12V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
DPAK
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
16.4A (Ta), 101A (Tc)
Customer Reference:
Power Dissipation (Max):
2.5W (Ta), 93.75W (Tc)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NVD5802NT4G-TB01. It features n-channel 40v 16.4a (ta), 101a (tc) 2.5w (ta), 93.75w (tc) surface mount dpak. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. Base Part Number: nvd580. The maximum gate charge and given voltages include 100nc @ 10v. It has a maximum Rds On and voltage of 4.4mohm @ 50a, 10v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 5v, 10v. The on semiconductor's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. The product's input capacitance at maximum includes 5300pf @ 12v. The product is available in surface mount configuration. The product automotive, aec-q101, is a highly preferred choice for users. dpak is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 16.4a (ta), 101a (tc). The product carries maximum power dissipation 2.5w (ta), 93.75w (tc). This product use mosfet (metal oxide) technology.

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Mult Dev EOL 16/Jul/2019(PCN Obsolescence/ EOL)
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NTD5802N, NVD5802N(Datasheets)

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