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ON Semiconductor NTP85N03

NTP85N03 ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NTP85N
Detailed Description:
N-Channel 28V 85A (Tc) 80W (Tc) Through Hole TO-220
Input Capacitance (Ciss) (Max) @ Vds:
2150pF @ 24V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
28V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
29nC @ 4.5V
Rds On (Max) @ Id, Vgs:
6.8mOhm @ 40A, 10V
Supplier Device Package:
TO-220
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3
Power Dissipation (Max):
80W (Tc)
Current - Continuous Drain (Id) @ 25°C:
85A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTP85N03. Base Part Number: ntp85n. It features n-channel 28v 85a (tc) 80w (tc) through hole to-220. The product's input capacitance at maximum includes 2150pf @ 24v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has a 28v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 29nc @ 4.5v. It has a maximum Rds On and voltage of 6.8mohm @ 40a, 10v. to-220 is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 80w (tc). The continuous current drain at 25°C is 85a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Multiple Devices 06/Oct/2006(PCN Obsolescence/ EOL)
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NTB, NTP85N03(Datasheets)

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