ON Semiconductor NTP75N03L09G

NTP75N03L09G ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NTP75N
Detailed Description:
N-Channel 30V 75A (Tc) 2.5W (Ta), 125W (Tc) Through Hole TO-220AB
Input Capacitance (Ciss) (Max) @ Vds:
5635pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
5V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
75nC @ 5V
Rds On (Max) @ Id, Vgs:
8mOhm @ 37.5A, 5V
Supplier Device Package:
TO-220AB
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3
Power Dissipation (Max):
2.5W (Ta), 125W (Tc)
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTP75N03L09G. Base Part Number: ntp75n. It features n-channel 30v 75a (tc) 2.5w (ta), 125w (tc) through hole to-220ab. The product's input capacitance at maximum includes 5635pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 5v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 75nc @ 5v. It has a maximum Rds On and voltage of 8mohm @ 37.5a, 5v. to-220ab is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 2.5w (ta), 125w (tc). The continuous current drain at 25°C is 75a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Multiple Devices 01/Jul/2009(PCN Obsolescence/ EOL)
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NTB,NTP75N03L09(Datasheets)

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