ON Semiconductor NTP27N06L

NTP27N06L ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NTP27N
Detailed Description:
N-Channel 60V 27A (Ta) 88.2W (Tc) Through Hole TO-220
Input Capacitance (Ciss) (Max) @ Vds:
990pF @ 25V
Drive Voltage (Max Rds On, Min Rds On):
5V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
60V
Vgs (Max):
±15V
Gate Charge (Qg) (Max) @ Vgs:
32nC @ 5V
Rds On (Max) @ Id, Vgs:
48mOhm @ 13.5A, 5V
Supplier Device Package:
TO-220
Packaging:
Tube
Operating Temperature:
-55°C ~ 175°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-220-3
Power Dissipation (Max):
88.2W (Tc)
Current - Continuous Drain (Id) @ 25°C:
27A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTP27N06L. Base Part Number: ntp27n. It features n-channel 60v 27a (ta) 88.2w (tc) through hole to-220. The product's input capacitance at maximum includes 990pf @ 25v. The drive voltage (maximum and minimum Rds On) of the product includes 5v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has a 60v drain to source voltage. The maximum Vgs rate is ±15v. The maximum gate charge and given voltages include 32nc @ 5v. It has a maximum Rds On and voltage of 48mohm @ 13.5a, 5v. to-220 is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 175°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-220-3. The product carries maximum power dissipation 88.2w (tc). The continuous current drain at 25°C is 27a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Multiple Devices 30/Dec/2003(PCN Obsolescence/ EOL)
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NTP27N06L, NTB27N06L(Datasheets)

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