Maximum Continuous Drain Current:
200 A
Transistor Material:
Si
Width:
6.1mm
Transistor Configuration:
Single
Maximum Drain Source Voltage:
40 V
Maximum Gate Threshold Voltage:
2V
Package Type:
DFN
Number of Elements per Chip:
1
Minimum Gate Threshold Voltage:
1.2V
Maximum Operating Temperature:
+175 °C
Typical Gate Charge @ Vgs:
32 nC @ 4.5 V, 70 nC @ 10 V
Channel Type:
N
Length:
5.1mm
Pin Count:
5
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
110 W
Maximum Gate Source Voltage:
-20 V, +20 V
Height:
1.1mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1.2V
Maximum Drain Source Resistance:
2.2 mΩ
Manufacturer Standard Lead Time:
30 Weeks
Detailed Description:
N-Channel 40V 200A (Tc) 3.8W (Ta), 110W (Tc) Surface Mount 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id:
2V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
8-PowerTDFN
Base Part Number:
NTMFS5
Gate Charge (Qg) (Max) @ Vgs:
70nC @ 10V
Rds On (Max) @ Id, Vgs:
1.5mOhm @ 50A, 10V
FET Type:
N-Channel
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
4300pF @ 20V
Mounting Type:
Surface Mount
Supplier Device Package:
5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
200A (Tc)
Customer Reference:
Power Dissipation (Max):
3.8W (Ta), 110W (Tc)
Technology:
MOSFET (Metal Oxide)
