ON Semiconductor NTLJF4156NTAG

NTLJF4156NTAG ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Schottky Diode (Isolated)
Detailed Description:
N-Channel 30V 2.5A (Tj) 710mW (Ta) Surface Mount 6-WDFN (2x2)
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Base Part Number:
NTLJF4156
Gate Charge (Qg) (Max) @ Vgs:
6.5nC @ 4.5V
Rds On (Max) @ Id, Vgs:
70mOhm @ 2A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
427pF @ 15V
Mounting Type:
Surface Mount
Supplier Device Package:
6-WDFN (2x2)
Packaging:
Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C:
2.5A (Tj)
Customer Reference:
Power Dissipation (Max):
710mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NTLJF4156NTAG. The FET features of the product include schottky diode (isolated). It features n-channel 30v 2.5a (tj) 710mw (ta) surface mount 6-wdfn (2x2). The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-wdfn exposed pad. Base Part Number: ntljf4156. The maximum gate charge and given voltages include 6.5nc @ 4.5v. It has a maximum Rds On and voltage of 70mohm @ 2a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.5v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 30v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 427pf @ 15v. The product is available in surface mount configuration. 6-wdfn (2x2) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The continuous current drain at 25°C is 2.5a (tj). The product carries maximum power dissipation 710mw (ta). This product use mosfet (metal oxide) technology.

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Multiple Devices 30/Mar/2012(PCN Obsolescence/ EOL)
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NTLJF4156N(Datasheets)

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