ON Semiconductor NTLJD3182FZTBG

NTLJD3182FZTBG ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Schottky Diode (Isolated)
Detailed Description:
P-Channel 20V 2.2A (Ta) 710mW (Ta) Surface Mount 6-WDFN (2x2)
Vgs(th) (Max) @ Id:
1V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Base Part Number:
NTLJD31
Gate Charge (Qg) (Max) @ Vgs:
7.8nC @ 4.5V
Rds On (Max) @ Id, Vgs:
100mOhm @ 2A, 4.5V
FET Type:
P-Channel
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
450pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
6-WDFN (2x2)
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
2.2A (Ta)
Customer Reference:
Power Dissipation (Max):
710mW (Ta)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NTLJD3182FZTBG. The FET features of the product include schottky diode (isolated). It features p-channel 20v 2.2a (ta) 710mw (ta) surface mount 6-wdfn (2x2). The typical Vgs (th) (max) of the product is 1v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-wdfn exposed pad. Base Part Number: ntljd31. The maximum gate charge and given voltages include 7.8nc @ 4.5v. It has a maximum Rds On and voltage of 100mohm @ 2a, 4.5v. It carries FET type p-channel. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±8v. The product's input capacitance at maximum includes 450pf @ 10v. The product is available in surface mount configuration. 6-wdfn (2x2) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 2.2a (ta). The product carries maximum power dissipation 710mw (ta). This product use mosfet (metal oxide) technology.

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Multiple Devices 21/Jan/2010(PCN Obsolescence/ EOL)
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NTLJD3182FZ(Datasheets)

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