ON Semiconductor NTHS4111PT1G

NTHS4111PT1G ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NTHS41
Detailed Description:
P-Channel 30V 3.3A (Ta) 700mW (Ta) Surface Mount ChipFET™
Input Capacitance (Ciss) (Max) @ Vds:
1500pF @ 24V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
30V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
28nC @ 10V
Rds On (Max) @ Id, Vgs:
45mOhm @ 4.4A, 10V
Supplier Device Package:
ChipFET™
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
P-Channel
Customer Reference:
Package / Case:
8-SMD, Flat Lead
Power Dissipation (Max):
700mW (Ta)
Current - Continuous Drain (Id) @ 25°C:
3.3A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTHS4111PT1G. Base Part Number: nths41. It features p-channel 30v 3.3a (ta) 700mw (ta) surface mount chipfet™. The product's input capacitance at maximum includes 1500pf @ 24v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has a 30v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 28nc @ 10v. It has a maximum Rds On and voltage of 45mohm @ 4.4a, 10v. chipfet™ is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type p-channel. Moreover, the product comes in 8-smd, flat lead. The product carries maximum power dissipation 700mw (ta). The continuous current drain at 25°C is 3.3a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Multiple Devices 31/Mar/2005(PCN Obsolescence/ EOL)
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NTHS4111P(Datasheets)

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