ON Semiconductor NTHS2101PT1

NTHS2101PT1 ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NTHS21
Detailed Description:
P-Channel 8V 5.4A (Tj) 1.3W (Ta) Surface Mount ChipFET™
Input Capacitance (Ciss) (Max) @ Vds:
2400pF @ 6.4V
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Drain to Source Voltage (Vdss):
8V
Vgs (Max):
±8V
Gate Charge (Qg) (Max) @ Vgs:
30nC @ 4.5V
Rds On (Max) @ Id, Vgs:
25mOhm @ 5.4A, 4.5V
Supplier Device Package:
ChipFET™
Packaging:
Tape & Reel (TR)
FET Type:
P-Channel
Customer Reference:
Package / Case:
8-SMD, Flat Lead
Power Dissipation (Max):
1.3W (Ta)
Current - Continuous Drain (Id) @ 25°C:
5.4A (Tj)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTHS2101PT1. Base Part Number: nths21. It features p-channel 8v 5.4a (tj) 1.3w (ta) surface mount chipfet™. The product's input capacitance at maximum includes 2400pf @ 6.4v. The drive voltage (maximum and minimum Rds On) of the product includes 1.8v, 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has a 8v drain to source voltage. The maximum Vgs rate is ±8v. The maximum gate charge and given voltages include 30nc @ 4.5v. It has a maximum Rds On and voltage of 25mohm @ 5.4a, 4.5v. chipfet™ is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. It carries FET type p-channel. Moreover, the product comes in 8-smd, flat lead. The product carries maximum power dissipation 1.3w (ta). The continuous current drain at 25°C is 5.4a (tj). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Multiple Devices 11/Feb/2009(PCN Obsolescence/ EOL)
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NTHS2101P(Datasheets)

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