ON Semiconductor NTHD4N02FT1

NTHD4N02FT1 ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Schottky Diode (Isolated)
Detailed Description:
N-Channel 20V 2.9A (Tj) 910mW (Tj) Surface Mount ChipFET™
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SMD, Flat Lead
Base Part Number:
NTHD4N
Gate Charge (Qg) (Max) @ Vgs:
4nC @ 4.5V
Rds On (Max) @ Id, Vgs:
80mOhm @ 2.9A, 4.5V
FET Type:
N-Channel
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
20V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
300pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
ChipFET™
Packaging:
Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C:
2.9A (Tj)
Customer Reference:
Power Dissipation (Max):
910mW (Tj)
Technology:
MOSFET (Metal Oxide)
Checking for live stock

This is manufactured by ON Semiconductor. The manufacturer part number is NTHD4N02FT1. The FET features of the product include schottky diode (isolated). It features n-channel 20v 2.9a (tj) 910mw (tj) surface mount chipfet™. The typical Vgs (th) (max) of the product is 1.2v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-smd, flat lead. Base Part Number: nthd4n. The maximum gate charge and given voltages include 4nc @ 4.5v. It has a maximum Rds On and voltage of 80mohm @ 2.9a, 4.5v. It carries FET type n-channel. The drive voltage (maximum and minimum Rds On) of the product includes 2.5v, 4.5v. The on semiconductor's product offers user-desired applications. The product has a 20v drain to source voltage. The maximum Vgs rate is ±12v. The product's input capacitance at maximum includes 300pf @ 10v. The product is available in surface mount configuration. chipfet™ is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The continuous current drain at 25°C is 2.9a (tj). The product carries maximum power dissipation 910mw (tj). This product use mosfet (metal oxide) technology.

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Multiple Devices 03/Jan/2008(PCN Obsolescence/ EOL)
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NTHD4N02F(Datasheets)

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