ON Semiconductor NTD80N02T4

NTD80N02T4 ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NTD80
Detailed Description:
N-Channel 24V 80A (Tc) 75W (Tc) Surface Mount DPAK
Input Capacitance (Ciss) (Max) @ Vds:
2600pF @ 20V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
24V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
42nC @ 4.5V
Rds On (Max) @ Id, Vgs:
5.8mOhm @ 80A, 10V
Supplier Device Package:
DPAK
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-252-3, DPak (2 Leads + Tab), SC-63
Power Dissipation (Max):
75W (Tc)
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTD80N02T4. Base Part Number: ntd80. It features n-channel 24v 80a (tc) 75w (tc) surface mount dpak. The product's input capacitance at maximum includes 2600pf @ 20v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has a 24v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 42nc @ 4.5v. It has a maximum Rds On and voltage of 5.8mohm @ 80a, 10v. dpak is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-252-3, dpak (2 leads + tab), sc-63. The product carries maximum power dissipation 75w (tc). The continuous current drain at 25°C is 80a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Multiple Devices 03/Jan/2008(PCN Obsolescence/ EOL)
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NTD80N02(Datasheets)

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