ON Semiconductor NTD80N02-001

NTD80N02-001 ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NTD80
Detailed Description:
N-Channel 24V 80A (Tc) 75W (Tc) Through Hole I-PAK
Input Capacitance (Ciss) (Max) @ Vds:
2600pF @ 20V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Through Hole
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
24V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
42nC @ 4.5V
Rds On (Max) @ Id, Vgs:
5.8mOhm @ 80A, 10V
Supplier Device Package:
I-PAK
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-251-3 Short Leads, IPak, TO-251AA
Power Dissipation (Max):
75W (Tc)
Current - Continuous Drain (Id) @ 25°C:
80A (Tc)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTD80N02-001. Base Part Number: ntd80. It features n-channel 24v 80a (tc) 75w (tc) through hole i-pak. The product's input capacitance at maximum includes 2600pf @ 20v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in through hole configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has a 24v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 42nc @ 4.5v. It has a maximum Rds On and voltage of 5.8mohm @ 80a, 10v. i-pak is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-251-3 short leads, ipak, to-251aa. The product carries maximum power dissipation 75w (tc). The continuous current drain at 25°C is 80a (tc). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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NTD80N02(Datasheets)

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