ON Semiconductor NTB5405NG

NTB5405NG ON Semiconductor
ON Semiconductor

Product Information

Detailed Description:
N-Channel 40V 116A (Tc) 3W (Ta), 150W (Tc) Surface Mount D2PAK
Vgs(th) (Max) @ Id:
3.5V @ 250µA
Operating Temperature:
-55°C ~ 175°C (TJ)
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Gate Charge (Qg) (Max) @ Vgs:
88nC @ 10V
Rds On (Max) @ Id, Vgs:
5.8 mOhm @ 40A, 10V
FET Type:
N-Channel
Standard Package:
50
Manufacturer:
ON Semiconductor
Drain to Source Voltage (Vdss):
40V
Vgs (Max):
±20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
4000pF @ 32V
Mounting Type:
Surface Mount
Supplier Device Package:
D2PAK
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Packaging:
Tube
Current - Continuous Drain (Id) @ 25°C:
116A (Tc)
Power Dissipation (Max):
3W (Ta), 150W (Tc)
Technology:
MOSFET (Metal Oxide)
RoHs Compliant
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This is manufactured by ON Semiconductor. The manufacturer part number is NTB5405NG. It features n-channel 40v 116a (tc) 3w (ta), 150w (tc) surface mount d2pak. The typical Vgs (th) (max) of the product is 3.5v @ 250µa. The product has -55°c ~ 175°c (tj) operating temperature range. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The maximum gate charge and given voltages include 88nc @ 10v. It has a maximum Rds On and voltage of 5.8 mohm @ 40a, 10v. It carries FET type n-channel. It is available in the standard package of 50. The on semiconductor's product offers user-desired applications. The product has a 40v drain to source voltage. The maximum Vgs rate is ±20v. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 4000pf @ 32v. The product is available in surface mount configuration. d2pak is the supplier device package value. The minimum and maximum Rds On drive voltage includes [Drive Voltage (Max Rds On, Min Rds On)]. In addition, tube is the available packaging type of the product. The continuous current drain at 25°C is 116a (tc). The product carries maximum power dissipation 3w (ta), 150w (tc). This product use mosfet (metal oxide) technology.

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Multiple Devices 21/Jan/2010(PCN Obsolescence/ EOL)
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NTB5405N(Datasheets)

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