ON Semiconductor NTB23N03R

NTB23N03R ON Semiconductor
ON Semiconductor

Product Information

Base Part Number:
NTB23
Detailed Description:
N-Channel 25V 23A (Ta) 37.5W (Tj) Surface Mount D2PAK
Input Capacitance (Ciss) (Max) @ Vds:
225pF @ 20V
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2V @ 250µA
Drain to Source Voltage (Vdss):
25V
Vgs (Max):
±20V
Gate Charge (Qg) (Max) @ Vgs:
3.76nC @ 4.5V
Rds On (Max) @ Id, Vgs:
45mOhm @ 6A, 10V
Supplier Device Package:
D2PAK
Packaging:
Tube
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N-Channel
Customer Reference:
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Power Dissipation (Max):
37.5W (Tj)
Current - Continuous Drain (Id) @ 25°C:
23A (Ta)
Technology:
MOSFET (Metal Oxide)
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTB23N03R. Base Part Number: ntb23. It features n-channel 25v 23a (ta) 37.5w (tj) surface mount d2pak. The product's input capacitance at maximum includes 225pf @ 20v. The drive voltage (maximum and minimum Rds On) of the product includes 4.5v, 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product has a 25v drain to source voltage. The maximum Vgs rate is ±20v. The maximum gate charge and given voltages include 3.76nc @ 4.5v. It has a maximum Rds On and voltage of 45mohm @ 6a, 10v. d2pak is the supplier device package value. In addition, tube is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n-channel. Moreover, the product comes in to-263-3, d²pak (2 leads + tab), to-263ab. The product carries maximum power dissipation 37.5w (tj). The continuous current drain at 25°C is 23a (ta). This product use mosfet (metal oxide) technology. The on semiconductor's product offers user-desired applications.

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Multiple Devices 06/Oct/2006(PCN Obsolescence/ EOL)
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NTB23N03R(Datasheets)

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